SIHFI9620G MOSFET Transistor

The SIHFI9620G is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHFI9620G transistor as follows.

SIHFI9620G Transistor Specification

Transistor Code		SIHFI9620G
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-220FP
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.5Ohm
Power Dissipation (Maximum)	PD	30W
Drain-Source Capacitance		110pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		27nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		15nC

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