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SIHFI9530G MOSFET Transistor

The SIHFI9530G is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHFI9530G transistor as follows.

Circuit diagram symbol of the SIHFI9530G transistor

SIHFI9530G Transistor Specification

Transistor Code SIHFI9530G
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO-220FP
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 7.7A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.3Ohm
Power Dissipation (Maximum) PD 42W
Drain-Source Capacitance 340pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 52nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 38nC

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