SIHFI530G MOSFET Transistor

The SIHFI530G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHFI530G transistor as follows.

SIHFI530G Transistor Specification

Transistor Code		SIHFI530G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220FP
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	9.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.16Ohm
Power Dissipation (Maximum)	PD	42W
Drain-Source Capacitance		250pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		28nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		33nC

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