SIHFD320 MOSFET Transistor

The SIHFD320 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHFD320 transistor as follows.

SIHFD320 Transistor Specification

Transistor Code		SIHFD320
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		HVMDIP
Drain-Source Voltage (Maximum)	VDS	400V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.49A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.8Ohm
Power Dissipation (Maximum)	PD	1W
Drain-Source Capacitance		120pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		14nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		20nC

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