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SIHFD210 MOSFET Transistor

The SIHFD210 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHFD210 transistor as follows.

Circuit diagram symbol of the SIHFD210 transistor

SIHFD210 Transistor Specification

Transistor Code SIHFD210
Transistor Type MOSFET
Control Channel Type N-Channel
Package HVMDIP
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 0.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.5Ohm
Power Dissipation (Maximum) PD 1W
Drain-Source Capacitance 53pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 17nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 8.2nC

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