SIHFD123 MOSFET Transistor

The SIHFD123 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHFD123 transistor as follows.

SIHFD123 Transistor Specification

Transistor Code		SIHFD123
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		HEXDIP
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.27Ohm
Power Dissipation (Maximum)	PD	1.3W
Drain-Source Capacitance		150pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		27nS

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