SIHFD110 MOSFET Transistor

The SIHFD110 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHFD110 transistor as follows.

SIHFD110 Transistor Specification

Transistor Code		SIHFD110
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		HVMDIP
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.54Ohm
Power Dissipation (Maximum)	PD	1.3W
Drain-Source Capacitance		81pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		16nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		8.3nC

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