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SIHF830A MOSFET Transistor

The SIHF830A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHF830A transistor as follows.

Circuit diagram symbol of the SIHF830A transistor

SIHF830A Transistor Specification

Transistor Code SIHF830A
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220AB
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 5A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.4Ohm
Power Dissipation (Maximum) PD 74W
Drain-Source Capacitance 93pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 21nS
Gate-Threshold Voltage (Maximum) 4.5V
Total Gate Charge 24nC

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