SIHF820S MOSFET Transistor

The SIHF820S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHF820S transistor as follows.

SIHF820S Transistor Specification

Transistor Code		SIHF820S
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	3Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		92pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8.6nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		24nC

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