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SIHF820AS MOSFET Transistor

The SIHF820AS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHF820AS transistor as follows.

Circuit diagram symbol of the SIHF820AS transistor

SIHF820AS Transistor Specification

Transistor Code SIHF820AS
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-263
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 2.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 3Ohm
Power Dissipation (Maximum) PD 50W
Drain-Source Capacitance 53pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 12nS
Gate-Threshold Voltage (Maximum) 4.5V
Total Gate Charge 17nC

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