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SIHF730S MOSFET Transistor

The SIHF730S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHF730S transistor as follows.

Circuit diagram symbol of the SIHF730S transistor

SIHF730S Transistor Specification

Transistor Code SIHF730S
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-263
Drain-Source Voltage (Maximum) VDS 400V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 5.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 1Ohm
Power Dissipation (Maximum) PD 74W
Drain-Source Capacitance 170pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 15nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 38nC

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