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SIHF6N65E MOSFET Transistor

The SIHF6N65E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHF6N65E transistor as follows.

Circuit diagram symbol of the SIHF6N65E transistor

SIHF6N65E Transistor Specification

Transistor Code SIHF6N65E
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220FP
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 7A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.6Ohm
Power Dissipation (Maximum) PD 31W
Drain-Source Capacitance 40pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 12nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 24nC

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