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SIHF610 MOSFET Transistor

The SIHF610 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHF610 transistor as follows.

Circuit diagram symbol of the SIHF610 transistor

SIHF610 Transistor Specification

Transistor Code SIHF610
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220AB
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 3.3A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.5Ohm
Power Dissipation (Maximum) PD 36W
Drain-Source Capacitance 53pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 17nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 8.2nC

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