SIHB30N60E MOSFET Transistor

The SIHB30N60E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHB30N60E transistor as follows.

SIHB30N60E Transistor Specification

Transistor Code		SIHB30N60E
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	29A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.125Ohm
Power Dissipation (Maximum)	PD	250W
Drain-Source Capacitance		138pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		32nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		85nC

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