SIHB28N60EF MOSFET Transistor

The SIHB28N60EF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHB28N60EF transistor as follows.

SIHB28N60EF Transistor Specification

Transistor Code		SIHB28N60EF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	28A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.123Ohm
Power Dissipation (Maximum)	PD	250W
Drain-Source Capacitance		123pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		40nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		80nC

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