SIHB22N60S MOSFET Transistor

The SIHB22N60S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHB22N60S transistor as follows.

SIHB22N60S Transistor Specification

Transistor Code		SIHB22N60S
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	22A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.19Ohm
Power Dissipation (Maximum)	PD	250W
Drain-Source Capacitance		1480pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		68nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		75nC

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