SIHB12N50C MOSFET Transistor

The SIHB12N50C is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHB12N50C transistor as follows.

SIHB12N50C Transistor Specification

Transistor Code		SIHB12N50C
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.555Ohm
Power Dissipation (Maximum)	PD	208W
Drain-Source Capacitance		165pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		35nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		32nC

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