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SIHA12N60E MOSFET Transistor

The SIHA12N60E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHA12N60E transistor as follows.

Circuit diagram symbol of the SIHA12N60E transistor

SIHA12N60E Transistor Specification

Transistor Code SIHA12N60E
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220FP
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 12A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.38Ohm
Power Dissipation (Maximum) PD 33W
Drain-Source Capacitance 53pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 19nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 29nC

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