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SIF80N060 MOSFET Transistor

The SIF80N060 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIF80N060 transistor as follows.

Circuit diagram symbol of the SIF80N060 transistor

SIF80N060 Transistor Specification

Transistor Code SIF80N060
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 80A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.006Ohm
Power Dissipation (Maximum) PD 100W
Drain-Source Capacitance 354pF
Operating Junction Temperature (Maximum) 150°C

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