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SIF1N65C MOSFET Transistor

The SIF1N65C is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIF1N65C transistor as follows.

Circuit diagram symbol of the SIF1N65C transistor

SIF1N65C Transistor Specification

Transistor Code SIF1N65C
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-251_TO-251S_TO-92
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 1A
Drain-Source On-State Resistance (Maximum) RDS(on) 15Ohm
Power Dissipation (Maximum) PD 28W
Operating Junction Temperature (Maximum) 150°C

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