The SIF1N60C is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.
Circuit diagram symbol of the SIF1N60C transistor as follows.
| Transistor Code | SIF1N60C | |
|---|---|---|
| Transistor Type | MOSFET | |
| Control Channel Type | N-Channel | |
| Package | TO-251_TO-251S_TO-92 | |
| Drain-Source Voltage (Maximum) | VDS | 600V |
| Gate-Source Voltage (Maximum) | VGS | 30V |
| Drain Current (Maximum) | ID | 1A |
| Drain-Source On-State Resistance (Maximum) | RDS(on) | 13Ohm |
| Power Dissipation (Maximum) | PD | 28W |
| Operating Junction Temperature (Maximum) | 150°C | |
UXPython is not the creator or an official representative of the SIF1N60C MOSFET transistor. You can download the official SIF1N60C MOSFET transistor datasheet to get more infromation about this transistor.
Note : Copyrighted materials belong to their creator or official representative.
SIF1N65C MOSFET Transistor
Copyright © UXPython inc. All rights reserved.
Devoloped by UXPython.