SIE882DF MOSFET Transistor

The SIE882DF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIE882DF transistor as follows.

SIE882DF Transistor Specification

Transistor Code		SIE882DF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		POLARPAK
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	47A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0014Ohm
Power Dissipation (Maximum)	PD	5.2W
Drain-Source Capacitance		1400pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		170nS
Gate-Threshold Voltage (Maximum)		2.2V
Total Gate Charge		96nC

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