SIE860DF MOSFET Transistor

The SIE860DF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIE860DF transistor as follows.

SIE860DF Transistor Specification

Transistor Code		SIE860DF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		POLARPAK
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	38A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0021Ohm
Power Dissipation (Maximum)	PD	5.2W
Drain-Source Capacitance		850pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		20nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		70nC

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