SIE854DF MOSFET Transistor

The SIE854DF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIE854DF transistor as follows.

SIE854DF Transistor Specification

Transistor Code		SIE854DF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		POLARPAK
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	13.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0142Ohm
Power Dissipation (Maximum)	PD	5.2W
Drain-Source Capacitance		250pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		4.4V
Total Gate Charge		50nC

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