SIE832DF MOSFET Transistor

The SIE832DF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIE832DF transistor as follows.

SIE832DF Transistor Specification

Transistor Code		SIE832DF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		POLARPAK
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	23.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0055Ohm
Power Dissipation (Maximum)	PD	5.2W
Drain-Source Capacitance		510pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		260nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		51nC

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