SIE830DF MOSFET Transistor

The SIE830DF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIE830DF transistor as follows.

SIE830DF Transistor Specification

Transistor Code		SIE830DF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		POLARPAK
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	27A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0042Ohm
Power Dissipation (Maximum)	PD	5.2W
Drain-Source Capacitance		650pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		105nS
Gate-Threshold Voltage (Maximum)		2V
Total Gate Charge		75nC

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