SIE822DF MOSFET Transistor

The SIE822DF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIE822DF transistor as follows.

SIE822DF Transistor Specification

Transistor Code		SIE822DF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		POLARPAK
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	31A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0034Ohm
Power Dissipation (Maximum)	PD	5.2W
Drain-Source Capacitance		1000pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		220nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		52nC

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