SIE820DF MOSFET Transistor

The SIE820DF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIE820DF transistor as follows.

SIE820DF Transistor Specification

Transistor Code		SIE820DF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		POLARPAK
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	30A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0035Ohm
Power Dissipation (Maximum)	PD	5.2W
Drain-Source Capacitance		950pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		115nS
Gate-Threshold Voltage (Maximum)		2V
Total Gate Charge		95nC

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