SIE812DF MOSFET Transistor

The SIE812DF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIE812DF transistor as follows.

SIE812DF Transistor Specification

Transistor Code		SIE812DF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		POLARPAK
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	33A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0026Ohm
Power Dissipation (Maximum)	PD	5.2W
Drain-Source Capacitance		800pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		265nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		111nC

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