SIE808DF MOSFET Transistor

The SIE808DF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIE808DF transistor as follows.

SIE808DF Transistor Specification

Transistor Code		SIE808DF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		POLARPAK
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	45A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0016Ohm
Power Dissipation (Maximum)	PD	5.2W
Drain-Source Capacitance		1600pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		215nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		102nC

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