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SIE802DF MOSFET Transistor

The SIE802DF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIE802DF transistor as follows.

Circuit diagram symbol of the SIE802DF transistor

SIE802DF Transistor Specification

Transistor Code SIE802DF
Transistor Type MOSFET
Control Channel Type N-Channel
Package POLARPAK
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 42.7A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0019Ohm
Power Dissipation (Maximum) PD 5.2W
Drain-Source Capacitance 1200pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 195nS
Gate-Threshold Voltage (Maximum) 2.7V
Total Gate Charge 105nC

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