SIE800DF MOSFET Transistor

The SIE800DF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIE800DF transistor as follows.

SIE800DF Transistor Specification

Transistor Code		SIE800DF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		POLARPAK
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	20.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0072Ohm
Power Dissipation (Maximum)	PD	5.2W
Drain-Source Capacitance		750pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		15nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		23nC

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