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SIE726DF MOSFET Transistor

The SIE726DF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIE726DF transistor as follows.

Circuit diagram symbol of the SIE726DF transistor

SIE726DF Transistor Specification

Transistor Code SIE726DF
Transistor Type MOSFET
Control Channel Type N-Channel
Package POLARPAK
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 35A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0024Ohm
Power Dissipation (Maximum) PD 5.2W
Drain-Source Capacitance 1100pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 35nS
Gate-Threshold Voltage (Maximum) 3V
Total Gate Charge 105nC

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