SID05N10 MOSFET Transistor

The SID05N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SID05N10 transistor as follows.

SID05N10 Transistor Specification

Transistor Code		SID05N10
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO251
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.17Ohm
Power Dissipation (Maximum)	PD	20W
Drain-Source Capacitance		38pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9.4nS

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