SIB912DK MOSFET Transistor

The SIB912DK is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIB912DK transistor as follows.

SIB912DK Transistor Specification

Transistor Code		SIB912DK
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SC-75-6L
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	1.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.216Ohm
Power Dissipation (Maximum)	PD	1.1W
Drain-Source Capacitance		24pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		2nC

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