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SIB800EDK MOSFET Transistor

The SIB800EDK is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIB800EDK transistor as follows.

Circuit diagram symbol of the SIB800EDK transistor

SIB800EDK Transistor Specification

Transistor Code SIB800EDK
Transistor Type MOSFET
Control Channel Type N-Channel
Package SC-75-6L
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 6V
Drain Current (Maximum) ID 1.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.225Ohm
Power Dissipation (Maximum) PD 1.1W
Operating Junction Temperature (Maximum) 150°C
Rise Time 12nS
Gate-Threshold Voltage (Maximum) 1V
Total Gate Charge 1.1nC

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