SIB457EDK MOSFET Transistor

The SIB457EDK is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIB457EDK transistor as follows.

SIB457EDK Transistor Specification

Transistor Code		SIB457EDK
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SC-75-6L
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	6.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.035Ohm
Power Dissipation (Maximum)	PD	2.4W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		22nC

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