SIB417AEDK MOSFET Transistor

The SIB417AEDK is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIB417AEDK transistor as follows.

SIB417AEDK Transistor Specification

Transistor Code		SIB417AEDK
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SC-75-6L
Drain-Source Voltage (Maximum)	VDS	8V
Gate-Source Voltage (Maximum)	VGS	5V
Drain Current (Maximum)	ID	7.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.032Ohm
Power Dissipation (Maximum)	PD	2.4W
Drain-Source Capacitance		415pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		18nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		12.3nC

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