SIB414DK MOSFET Transistor

The SIB414DK is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIB414DK transistor as follows.

SIB414DK Transistor Specification

Transistor Code		SIB414DK
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SC-75-6L
Drain-Source Voltage (Maximum)	VDS	8V
Gate-Source Voltage (Maximum)	VGS	5V
Drain Current (Maximum)	ID	7.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.026Ohm
Power Dissipation (Maximum)	PD	2.4W
Drain-Source Capacitance		280pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		13nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		9.35nC

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