SIB413DK MOSFET Transistor

The SIB413DK is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIB413DK transistor as follows.

SIB413DK Transistor Specification

Transistor Code		SIB413DK
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SC-75-6L
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	4.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.075Ohm
Power Dissipation (Maximum)	PD	2.4W
Drain-Source Capacitance		93pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		46nS
Gate-Threshold Voltage (Maximum)		1.5V
Total Gate Charge		5.09nC

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