SIB406EDK MOSFET Transistor

The SIB406EDK is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIB406EDK transistor as follows.

SIB406EDK Transistor Specification

Transistor Code		SIB406EDK
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SC-75-6L
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	5.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.046Ohm
Power Dissipation (Maximum)	PD	1.95W
Drain-Source Capacitance		63pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		1.4V
Total Gate Charge		7.5nC

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