SIA929DJ MOSFET Transistor

The SIA929DJ is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIA929DJ transistor as follows.

SIA929DJ Transistor Specification

Transistor Code		SIA929DJ
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SC-70-6
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	4.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.064Ohm
Power Dissipation (Maximum)	PD	1.9W
Operating Junction Temperature (Maximum)		150°C
Rise Time		18nS
Gate-Threshold Voltage (Maximum)		1.1V
Total Gate Charge		14nC

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