SIA921EDJ MOSFET Transistor

The SIA921EDJ is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIA921EDJ transistor as follows.

SIA921EDJ Transistor Specification

Transistor Code		SIA921EDJ
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SC-70-6
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	4.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.059Ohm
Power Dissipation (Maximum)	PD	1.9W
Operating Junction Temperature (Maximum)		150°C
Rise Time		20nS
Gate-Threshold Voltage (Maximum)		1.4V
Total Gate Charge		15nC

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