SIA920DJ MOSFET Transistor

The SIA920DJ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIA920DJ transistor as follows.

SIA920DJ Transistor Specification

Transistor Code		SIA920DJ
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SC-70-6
Drain-Source Voltage (Maximum)	VDS	8V
Gate-Source Voltage (Maximum)	VGS	5V
Drain Current (Maximum)	ID	4.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.027Ohm
Power Dissipation (Maximum)	PD	1.9W
Drain-Source Capacitance		175pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		0.7V
Total Gate Charge		4.8nC

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