SIA913ADJ MOSFET Transistor

The SIA913ADJ is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIA913ADJ transistor as follows.

SIA913ADJ Transistor Specification

Transistor Code		SIA913ADJ
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SC-70-6
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	4.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.061Ohm
Power Dissipation (Maximum)	PD	1.9W
Drain-Source Capacitance		280pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		25nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		13.1nC

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