SIA910EDJ MOSFET Transistor

The SIA910EDJ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIA910EDJ transistor as follows.

SIA910EDJ Transistor Specification

Transistor Code		SIA910EDJ
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SC-70-6
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	4.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.028Ohm
Power Dissipation (Maximum)	PD	1.9W
Drain-Source Capacitance		190pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		10.5nC

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