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SIA907EDJT MOSFET Transistor

The SIA907EDJT is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIA907EDJT transistor as follows.

Circuit diagram symbol of the SIA907EDJT transistor

SIA907EDJT Transistor Specification

Transistor Code SIA907EDJT
Transistor Type MOSFET
Control Channel Type P-Channel
Package SC-70-6L
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 4.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.057Ohm
Power Dissipation (Maximum) PD 1.9W
Operating Junction Temperature (Maximum) 150°C
Rise Time 15nS
Gate-Threshold Voltage (Maximum) 1.4V
Total Gate Charge 15nC

UXPython is not the creator or an official representative of the SIA907EDJT MOSFET transistor. You can download the official SIA907EDJT MOSFET transistor datasheet to get more infromation about this transistor.

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