SIA850DJ MOSFET Transistor

The SIA850DJ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIA850DJ transistor as follows.

SIA850DJ Transistor Specification

Transistor Code		SIA850DJ
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SC-70-6
Drain-Source Voltage (Maximum)	VDS	190V
Gate-Source Voltage (Maximum)	VGS	16V
Drain Current (Maximum)	ID	0.47A
Drain-Source On-State Resistance (Maximum)	RDS(on)	3.8Ohm
Power Dissipation (Maximum)	PD	1.9W
Drain-Source Capacitance		5pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		15nS
Gate-Threshold Voltage (Maximum)		1.4V
Total Gate Charge		3nC

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