SIA817EDJ MOSFET Transistor

The SIA817EDJ is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIA817EDJ transistor as follows.

SIA817EDJ Transistor Specification

Transistor Code		SIA817EDJ
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SC-70-6
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	4.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.065Ohm
Power Dissipation (Maximum)	PD	1.6W
Drain-Source Capacitance		55pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		20nS
Gate-Threshold Voltage (Maximum)		1.3V
Total Gate Charge		14nC

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