SIA814DJ MOSFET Transistor

The SIA814DJ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIA814DJ transistor as follows.

SIA814DJ Transistor Specification

Transistor Code		SIA814DJ
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SC-70-6
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	4.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.061Ohm
Power Dissipation (Maximum)	PD	1.6W
Drain-Source Capacitance		45pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		1.5V
Total Gate Charge		7nC

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